Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation
voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
www.
DataSheCeto4lUle.
cctoorm-base
voltage 2SD1266 VCBO
60
V
(Emitter open)
2SD1266A
80
Collector-emitter
voltage 2SD1266 VCEO
60
V
(Base open)
2SD1266A
80
Emitter-base
voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power
TC = 25°C PC
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