Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type darlington
For power amplification Complementary to 2SB0949 and 2SB0949A
• High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
16.
7±0.
3 0.
7±0.
1
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Unit: mm
10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 2.
7±0.
2
7.
5±0.
2
■ Features
φ 3.
1±0.
1
4.
2±0.
2
Solder Dip (4.
0)
14.
0±0.
5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.
0 150 −55 to +150 °C °C V A A W V Unit V
1.
4±0.
1
1.
3±0.
2 0.
5+0.
2 –0.
1
0.
8...