Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
15.
0±0.
3 11.
0±0.
2
com
Unit: mm
5.
0±0.
2 3.
2
s Features
q q q
16.
2±0.
5 12.
5 3.
5 Solder Dip
High foward current transfer ratio hFE High collector to base
voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 200 150 200 5 10 6 60 3 150 –55 to +150 Unit V
0.
7
21.
0±0.
5 15.
0±0.
2
φ3.
2±0.
1
2.
0±0.
2
2.
0±0.
1 0.
6±0.
2
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.
1±0.
1 5.
45±0.
3 10.
9±0.
5 1 2 3
emitter
voltage 2SD1457A Emitter to base volt...