2SD1509
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD1509
Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation
voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO 80 V
Collector-emitter
voltage
VCEO 80 V
Emitter-base
voltage
VEBO 8 V
Collector current
IC 2 A
Base current
IB 0.
5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.
5 W
10
JEDEC JEITA
― ―
Junction temperature Storage temperature range
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