Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat).
VCE(sat) = 0.
5V (Typ.
) (IC/IB = 2A / 0.
2A) 2) Complements the 2SB1184 / 2SB1243.
Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.
5±0.
2 5.
1 +0.
2 −0.
1 C0.
5 2.
3 +0.
2 −0.
1 0.
5±0.
1 2SD1864 6.
8±0.
2 2.
5±0.
2 1.
5±0.
3 4.
4±0.
2 0.
9 1.
5 2.
5 9.
5±0.
5 +0.
3 −0.
1 0.
9 5.
5 1.
0 0.
75 0.
9 0.
65±0.
1 2.
3±0.
2 2.
3±0.
2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 0.
55±0.
1 1.
0±0.
2 (1) Base (2) Collector (3) Emitter 0.
65Max.
0.
5±0.
1 (1) (2) (3) 2.
54 2.
54 1.
05 14.
5±0.
5 0.
45±0.
1 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits U...

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