TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
• Low saturation
voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 2A / IB = 0.
2A) • High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
60 60 7 3 0.
5 2.
0 25 150 −55 to 150
V V V A A
W
°C °C
JEDEC JEITA
― ―
Note 1: Using continuously under heavy loads (e.
g.
the applicatio...