Ordering number : ENA1176
FTD2017M
SANYO Semiconductors
DATA SHEET
FTD2017M
Features
• • • • •
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Low ON-resistance.
2.
5V drive.
Mount height 1.
1mm.
Composite type, facilitating high-density mounting.
Drain common specifications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm 2✕0.
8mm) 1unit When mounted on ceramic substrate (1000m...