TetraFET D2019UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.
5W – 28V – 1GHz SINGLE ENDED FEATURES H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM Dim.
A B C D E F G H J K L M N P mm 4.
06 5.
08 1.
27 0.
51 3.
56 4.
06 1.
65 0.
76 0.
51 1.
02 45° 0° 7° 0.
20 2.
18 4.
57 Tol.
±0.
08 ±0.
08 ±0.
08 ±0.
08 ±0.
08 ±0.
08 ±0.
08 +0.
25 -0.
00 Min.
Max.
Max.
Min.
Max.
±0.
08 Max.
±0.
08 Inch...

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