INCHANGE Semiconductor
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isc Silicon NPN Power Transistor
isc Product Specification
2SD2027
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346
APPLICATIONS ·Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.
cnSYMBOL
PARAMETER
VALUE
UNIT
.
iscsemVCBO
Collector-Base
Voltage
60 V
VCEO Collector-Emitter
Voltage
60 V
wwwVEBO
Emitter-Base
Voltage
6V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Ts...