INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability
isc Product Specification
D209L
APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
700 V
VCEO
Collector-Emitter
Voltage
400 V
VEBO
Emitter-Base
voltage
9V
IC Collector Current-Continuous Collector Power Dissipation
PC @ TC=25℃ TJ Junction Temperature
12 A 100 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.
iscsemi.
cn
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