INCHANGE Semiconductor
com
isc Silicon NPN Power Transistor
isc Product Specification
2SD2236
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 100V(Min.
) ·Wide Area of Safe Operation ·Complement to Type 2SB1477
APPLICATIONS ·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.
cnSYMBOL
PARAMETER
VALUE
UNIT
.
iscsemVCBO
Collector-Base
Voltage
100 V
wwwVCEO
Collector-Emitter
Voltage
100 V
VEBO
Emitter-Base
Voltage
5V
IC Collector Current-Continuous Collector Power Dissipation
PC @ TC=25℃ TJ Junction Temperature
5A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website：www.
iscsemi.
cn
INCHANGE Semico...