UTC D313
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC D313 is designed for use in general purpose amplifier and switching applications.
1
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Storage Temperature Junction Temperature
SYMBOL
VCBO VCEO VEBO Ic TSTG Tj
VALUE
60 60 5 3 -55 ~ +150 150
UNIT
V V V A °C °C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation
Voltage...