AOD3N50 3A, 500V N-Channel
MOSFET
General Description
The AOD3N50 has been fabricated using an advanced high
voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features
VDS (V) = 600V @ 150°C ID = 2.
8A RDS(ON) 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested!
TO-252 D-PAK Top View Bottom View D
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Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drai...