N-Channel Trench Power
MOSFET
General Description
The D444 combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON).
Those devices are suitable for use in PWM, load switching and general purpose applications.
Features
● VDS=60V; ID=15A RDS(ON)40mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Power switching application ● load switching
D444
To-252 Top View
Schematic Diagram
VDS =60V ID = 15A
RDS(ON)= 32mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
D444
D444
TO-252
Reel Size -
Table 1.
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source
Voltage...