D5929
Silicon NPN transistor epitaxial type D5929
[ Applications ] Inverter, Strobo flash, DC-DC converter with small collector-emitter saturation
voltage.
Power switching with high collector current.
[ Feature ] High collector-emitter breakdown
voltage BVCEO= 30V High emitter-base breakdown
voltage BVEBO= 9V Small collector-emitter saturation
voltage VCE(sat)= 0.
35V(Typ.
) at IC= 1.
5A, IB= 50mA
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings
Collector-base
voltage
VCBO
50
Collector-emitter
voltage
VCEO
30
Emitter-base
voltage
VEBO
9
Collector current
IC 3
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Unit V V V A C C
[ Elec...