2SD717
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL PARAMETER Collector-emitter
voltage peak value VCBO Collector-emitter
voltage (open base) VCEO Collector current (DC) IC www.
DataSheet4U.
com Collector current peak value ICM Total power dissipation Ptot Collector-emitter saturation
voltage VCEsat Diode forward
voltage VF Fall time tf CONDITIONS VBE = 0V
TO-3P(I)D
TYP MAX 70 70 10 80 2 2.
0 1.
0UNIT V V A A W V V s
Tmb 25 IC = 4.
0A; IB=0.
4A IF = 3.
5A IC=4A,IB1=-IB2=0.
4A,VCC=30V
1.
5 0.
4
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC I...