2SD862
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
TO-126
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Diode forward
voltage Fall time
Tmb 25 IC = 1.
5A; IB = 0.
15A IF = 1.
5A
1.
5
MAX 20 20 2 10 0.
5 2.
0 -
UNIT V V A A W V V s
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collec...