SOT-89-3L Plastic-Encapsulate Transistors
D882H TRANSISTOR (NPN)
FEATURE Low VCE(sat) Large current capacity
MAKING: D882H
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value 70 60 6 3 500 250 150
-55~+150
SOT-89-3L
1.
BASE 2.
COLLECTOR 3.
EMITTER
Unit V V V A
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakd...