DC COMPONENTS CO.
, LTD.
R
DC9012
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable redios in class B push-pull operation.
TO-92
.
190(4.
83) .
170(4.
33) .
190(4.
83) .
170(4.
33) 2 Typ 2 Typ .
500 Min (12.
70) .
022(0.
56) .
014(0.
36) .
100 Typ (2.
54) .
148(3.
76) .
132(3.
36) .
022(0.
56) .
014(0.
36)
o o
Pinning
1 = Emitter 2 = Base 3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating -40 ...