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DC COMPONENTS CO.
, LTD.
R
DC9014
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and low noise.
TO-92
.
190(4.
83) .
170(4.
33) .
190(4.
83) .
170(4.
33) 2 Typ 2 Typ
o o
Pinning
1 = Emitter 2 = Base 3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 50 45 5 100 450 +150 -55 to +150 Unit V V V mA mW
o o
.
500 Min (12.
70) .
022(0.
56) .
014(0.
36) .
100 Typ (2.
54) .
148(3.
76) .
132(3...