ADAVDAVNACNECDE IDNIFNOFRORMAMTAITOINON
L1_2 L1_1
Features
Dual 30V N-Channel
MOSFETs (Q1, Q2) with Dual 3.
0A Super Barrier Rectifier Diodes (D1, D2) packaged in a 4.
0 x 4.
0 x 0.
6mm DFN package
Full-Bridge Rectifier Block Super Barrier Rectifiers (D1, D2)
Ultra low forward
voltage drop Patented Super Barrier Rectifier technology +150°C operating temperature ±8kV ESD protection (HBM, 3B) ±25kV ESD protection (IEC61000-4-2 Level 4, Air
Discharge) N-Channel
MOSFET (Q1, Q2)
Low On-Resistance to minimize conduction loss Low Gate Threshold
Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2...