DG55N06
N N-CHANNEL ENHANCEMENT MODE
MOSFET
：V1.
0
General Description
DG55N06N，，
，，，。
，，。
DG55N06 is an N-channel enhancement mode
MOSFET, which is produced using Dongguang Micro-electronics’s
proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
for higher efficiency and system miniaturization.
Symbol
MAIN CHARACTERISTICS
VDSS ID
RDS(ON) Crss
60 55 18 115
V A mΩ pF
Package
１ /10
ABS...