DG730
N N-CHANNEL ENHANCEMENT MODE
MOSFET
:V1.
0
General Description
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DG730 is an N-channel enhancement mode
MOSFET, which is produced using Dongguang Microelectronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS
VDSS ID
RDS(ON) Crss
400 5.
5 1.
0 16
V A Ω pF
Symbol Package
1 /8
ABSOLUTE MAXIMUM RA...