www.
DataSheet4U.
com
DC COMPONENTS CO.
, LTD.
R
DMBTA64
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR
Description
Designed for applications requiring high current gain.
SOT-23
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.
020(0.
50) .
012(0.
30)
.
063(1.
60) .
055(1.
40)
.
108(0.
65) .
089(0.
25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating -30 -30 -10 -500 225 +150 -55 to +150 Unit V V V mA mW
o o
.
091(2.
30) .
067(1.
70) .
118(3.
00) .
110(2.
80)
.
045(1.
15) .
034(0.
...