isc N-Channel
MOSFET Transistor
FEATURES ·Drain Current –ID= 5.
5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.
4Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID
Drain-Source
Voltage Gate-Source
Voltage-Continuous Drain Current-Continuous
650
V
±30
V
5.
5
A
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
10
A
125
W
TJ
Max.
Operating Junction Temperature -55~150 ℃
Tstg
Storage ...