NEW PRODUCT
DMN53D0L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON)
1.
6Ω @ VGS = 10V 2.
5Ω @ VGS = 4.
5V
ID TA = +25°C
500 mA
200 mA
Description and Applications
This
MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
SOT23
Features and Benefits
• N-Channel
MOSFET • Low On-Resistance • Very Low Gate Threshold
Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected to 2KV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
“Green” Device (...