A D VNA EN CWEPDRINONEDFWUOCRPTRMOADT IUOCNT
Product Summary
V(BR)DSS 60V
RDS(ON) max
2Ω @ VGS = 10V 3Ω @ VGS = 5V
ID max TA = +25°C
380mA
310mA
Description
This
MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control Power Management Functions Backlighting
SOT323
G
DMN63D1LW
N-CHANNEL ENHANCEMENT MODE
MOSFET
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
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