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DMP1011UCB9
P-CHANNEL ENHANCEMENT MODE
MOSFET
Product Summary (Typ.
@ VGS = -4.
5V, TA = +25°C)
BVDSS -8V
RDS(ON) 8.
2mΩ
Qg 8.
1nC
Qgd 1.
8nC
ID -10A
Description
This 3rd generation Lateral
MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer.
It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
Features
LD-MOS Technology with the Lowest Figure of Merit: -RDS(ON) = 8.
2mΩ to Minimize On-State Losses -Qg = 8.
1nC for Ultra-Fast Switching
VGS(th) = -0.
8V Typ.
for a Low Turn-On Pot...