DP8205
www.
depuw.
com General Description
Dual N-Channel Enhancement Power
MOSFET
Product Summary
Rev3.
1
DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
VDS ID (at VGS=4.
5V) RDS(ON) (at VGS = 4.
5V) RDS(ON) (at VGS = 2.
5V)
20 V 5.
0A 29mΩ 34mΩ
SOT23-6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta
Maximum Power Dissipationa Operating Junction and Storage Temperature Range...