DTP4N6SJ/DTP4N6FSJ/DTU4N6SJ/DTL4N6SJ
www.
din-tek.
jp
/$IBOOFM7 %4
4VQFS+VODUJPOPower
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC)
650
VGS = 10 V 15 3 6
Configuration
Single
0.
85
FEATURES
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche
Voltage and Current
• Compliant to RoHS directive 2002/95/EC
TO-220AB
TO-220 FULLPAK
TO-252
TO-251
D
GD S Top View
GDS Top View
GDS Top View
GDS Top View
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drai...