RF
MOSFET Power Transistor, ISW, 12V 2 - 175 MHz
Features
l l l l l l
DU1215S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications .
w
Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance
C ISS C
OSS
9.
5 60 -
50
60
pF pF pF dB % -
VD,=12.
0 V, F=l .
O MHz V&2.
0 V&2.
0 V, F=l .
OMHz V, F=l .
OMHz
Gss GP % VSWR-T
12 3O:l
V,,=12.
0 V, lDcl=lOO mA.
PO*1 5 W, F=175 MHz VD,=12.
0 V, l&O0 mA, PO,=15 W, F=175 MHZ
VDD=12.
0 V, I,,=100 mA, PO,=15 W, F=l75 MHz
Specifications Subject to Chang...