an AMP company
==
z
I
RF M’OSFET 2 - 175 MHz
Features
Power Transistor,
4OW,28V
DU2840S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
.
.
Absolute Maximum Ratings at 25°C
Parameter Drain-Source Gate-Source Drain-Source
Voltage Voltage Current 1 1 Symbol V DS V GS ‘0s PD T, T STG 8 JC 1 ( Rating 65 20 Units V V 1 * W “C “C 1
A
8
125 200 -55 to +150 1.
4
Power Dissipation JunctionTemperature StorageTemperature Thermal Resistance
24.
64
24.
09
.
970
.
980
B
i 18.
29 t 18.
54 1 ,720 1 ,730
D
“CiW
E
9.
47
&22 564 292
9.
73
6.
48 5.
79 3.
30
-373 .
245 ,222 .
115
,393 255 E28 .
...