an AMP comoanv
RF
MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
DU2880T
Absolute Maximum Ratings at 25°C
Thermal Resistance
Electrical Characteristics
I Parameter
Drain-Source Drain-Source Gate-Source Breakdown
Voltage
at 25°C
1 Symbol
BVDSS
1 Min
65
1 Max ( Units 1
4.
0 4.
0 V mA pA V S pF pF PF dB % V,,=O.
O V, 1,,=20.
0 mA V,,=28.
0 v,,=20.
0 V&O.
0 v,,=lo.
o V,,=28.
0 V,,=28.
0 V,,=28.
0 V,,=28.
0 V,,=28.
0 V,,=28.
0 V, V,,=O.
O V v, v,,=o.
o v
Test Conditions
Leakage Current
LeakageCurrent
‘DSS
‘GSS V GSITHI GM C ISS C as...