E
28F010 1024K (128K X 8)
CMOS FLASH MEMORY
8
n Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program 2 Second Chip-Program
n 100,000 Erase/Program Cycles n 12.
0 V ±5% VPP n High-Performance Read
90 ns Maximum Access Time
n
CMOS Low Power Consumption
10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power
n Integrated Program/Erase Stop Timer
n Command Register Architecture for
Microprocessor/Microcontroller Compatible Write Interface
n Noise Immunity Features
±10% VCC Tolerance Maximum Latch-Up Immunity
through EPI Processing
n ETOX™ Nonvolatile Flash Technology
EPROM-Comp...