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EB201/D High Cell Density
MOSFETs
Low On–Resistance Affords New Design Options
Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.
com
ENGINEERING BULLETIN
Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream.
After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire.
Today a sub–10 mΩ power
MOSFET is not only available, it is housed in a standard TO–220.
Such are the advances that have occurred lately in “high cell density” power
MOSFET technology.
Furthermore, Motorola’s high cell density technology, HDTMOS®, brings other advantages such as greatly improved body diode performance.
The technological advances are suff...