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Ordering number : ENA0301
ECH8615
SANYO Semiconductors
DATA SHEET
P-Channel Silicon
MOSFET
ECH8615
Features
• •
General-Purpose Switching Device Applications
4V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.
8mm) 1unit Mounted on a ceramic board (900mm2!0.
8mm) Conditions Ratings --60 ± 20 --2 --20 1.
3 1.
5 150 --55 to +...