Part Number
|
EFA120D-SOT89 |
Manufacturer
|
ETC |
Description
|
Low Distortion GaAs Power FET |
Published
|
Apr 23, 2005 |
Detailed Description
|
Excelics
PRELIMINARY DATA SHEET
EFA120D-SOT89
DC-4GHz
177-183 65-75
SOURCE
Low Distortion GaAs Power FET
• • • • • • •...
|
Datasheet
|
EFA120D-SOT89
|
Overview
Excelics
PRELIMINARY DATA SHEET
EFA120D-SOT89
DC-4GHz
177-183 65-75
SOURCE
Low Distortion GaAs Power FET
• • • • • • • •
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE +28.
0dBm TYPICAL OUTPUT POWER 14.
0dB TYPICAL POWER GAIN AT 2GHz 0.
7dB TYPICAL NOISE FIGURE AT 2GHz +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.
5 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
65-69
160-170
95-100
SOURCE
29-31 59
16-20 14-16
• •
Applications Analog and Digital Wireless System HPA
(Top View) All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE NF IP3 Ids...
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