Part Number
|
EM484M3244VBE |
Manufacturer
|
Eorex |
Description
|
128Mb Synchronous DRAM |
Published
|
Feb 6, 2017 |
Detailed Description
|
eorex
Revision History
Revision 0.1 (Dec. 2013) - First release
EM484M3244VBE
Dec. 2013
www.eorex.com 1/18
eorex
EM...
|
Datasheet
|
EM484M3244VBE
|
Overview
eorex
Revision History
Revision 0.
1 (Dec.
2013) - First release
EM484M3244VBE
Dec.
2013
www.
eorex.
com 1/18
eorex
EM484M3244VBE
128Mb (1M4Bank32) Synchronous DRAM
Features
• Fully Synchronous to Positive Clock Edge • Single 3.
3V 0.
3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page • Programmable CAS Latency (C/L) - 2 or 3 • Data Mask (DQM) for Read / Write Masking • Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page) – Interleave (B/L = 1/2/4/8) • Burst Read with Single-bit Write Operation • All Inputs are Sampled at the Rising Edge of
the System Clock • Auto Refresh and Self Refresh • 4,096 Refresh C...
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