N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.
)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06N03E
LIMITS
UNIT
Gate‐Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
80 50 170
Avalanche Current
IAS 53
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=53A, RG=25Ω L = 0.
05mH
EAS EAR
140 40
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
...