N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.
)
9.
5mΩ
ID 10A UIS, Rg 100% Tested
G S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
G D D
PIN 1
SYMBOL
EMB09N03VAT
LIMITS
UNIT
Gate‐Source
Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=10A, RG=25Ω
L = 0.
05mH
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR P...