Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.
)
45mΩ
ID 6A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB45A06G
LIMITS
UNIT
Gate‐Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
ID IDM
6 4.
5 24
Avalanche Current
IAS 15
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=12A, RG=25Ω
L = 0.
05mH
EAS EAR
7.
2 3.
6
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
...