N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.
)
65mΩ
ID UIS, 100% Tested
6A
G S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source
Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=7A, RG=25Ω
L = 0.
05mH
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
EMB70N08V
LIMITS ±20 6 4.
5 24 7 2.
45 1.
23 ...