N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.
)
4.
0mΩ
ID
150A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD03N06ES
LIMITS
UNIT
Gate‐Source
Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=80A, RG=25Ω
L = 0.
05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
±20 150 97 ...