N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.
)
1.
85Ω
ID UIS, 100% Tested
5A
G S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source
Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 3mH, ID=5A, RG=25Ω L = 0.
5mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
EMD05N50F
LIMITS ±30 5 3 20 5 37.
5 6.
25 48 19
‐55 to 150...