MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 500V D RDSON (MAX.) 1.3Ω ID 7A G UIS, 100% Tested S Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1...
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