Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.
)
20mΩ
ID 6A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMF20A02G
LIMITS
UNIT
Gate‐Source
Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=10A, RG=25Ω
L = 0.
05mH
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
±12 6 4 24 10 5 2.
5 ...