P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.
)
8.
5mΩ
ID ‐70A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ESD Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMZB08P03H
LIMITS
UNIT
Gate‐Source
Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.
1mH, ID=‐50A, RG=25Ω
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS PD
Tj, Tstg
±20 ‐70 ‐50 ‐150 ‐50 125 50 20 ‐55 to 150
V ...