EN71SN10F
EN71SN10F 1.
8V NAND Flash + 1.
8V Mobile DDR SDRAM Multi-Chip Package
Features
• Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit
• Device Packaging - 107 balls FBGA Area: 10.
5x13 mm; Height: 1.
2 mm
• Operating
Voltage - NAND : 1.
7V to 1.
95V - Mobile DDR SDRAM : 1.
7V to 1.
95V
• Operating Temperature :-25 °C to +85 °C
NAND FLASH
•
Voltage Supply: 1.
8V (1.
7V ~ 1.
95V ) • Organization
- Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Multiplexed address/ data - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Rand...