EPC2112

EPC2115 : EPC2115 – Dual 150 V, 5 A Integrated Gate Drivers eGaN® IC Preliminary Datasheet FEATURES: • Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply • Dual 88-mΩ, 150-V eGaN FET • Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm APPLICATIONS: • Wireless Power (Highly Resonant and Inductive) • High Frequency DC-DC Conversion Schematic Diagram DESCRIPTION The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA packag.

EPC2111 : eGaN® FET DATASHEET EPC2111 – Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 16 A (Q2) EPC2111 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. DEVICE Q1 Q2 Maximum Ratings PARAMETER Drain-to-Source Voltage (Continuous) VDS Drain-to-Source Voltage (up to 10,000 5 m.