Description
The ESD9N5BU protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other
voltage induced transient events.
They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating
voltage.
It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.
Feature
¾ 80W peak pulse power per line (tP = 8/20μs) ¾ DFN1006-2L package ¾ Replacement for MLV(0402) ¾ Bidirectional configurations ¾ Response time is typically 1ns ¾ Low clamping
voltage ¾ RoHS ...